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By B. Jayant Baliga

Advanced strength Rectifier techniques offers an in-depth therapy of the physics of operation of complicated energy rectifiers. Analytical types for explaining the operation of all of the complex energy rectifier units are built. result of numerical simulations are supplied for added perception into equipment physics and for validation of assorted analytical models.

Drawing upon years of useful adventure and utilizing a number of examples and illustrative designs, B. Jayant Baliga discusses:

Analytical formulations for layout and research of constructions corresponding to the Junction Barrier managed Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier

Numerical simulations to provide an explanation for the working physics and validate the models

The position of silicon carbide within the structural layout and improvement of strength rectifiers

Advanced energy Rectifier suggestions can be of curiosity to training engineers within the energy semiconductor neighborhood and will additionally function a reference for graduate scholars and college doing study in an educational atmosphere. chosen sections of the publication can be utilized as supplementary educating fabric for classes taught utilizing the textbook 'Fundamentals of strength Semiconductor units' by means of the author.

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Sample text

37 microns. Consequently, the current density at the Schottky contact region where the current is transported is enhanced by a factor 3 times when compared with the cathode (or average cell) current density. 5 mm ┬Ám 1 10 Forward Current Density 100 1000 (A/cm 2) Fig. 6 Forward Characteristics of a 50V Silicon JBS Rectifier Structure. The on-state i-v characteristics obtained by using the three models for the above JBS rectifier structure are shown in Fig. 6. 70 eV was used for this analysis. Although Model B is slightly pessimistic when compared with the other two models, their predictions are very close to each other for determination of the on-state voltage drop.

The experimentally observed increase in leakage current is about 6 orders of magnitude with increase in reverse bias voltage. 1 eV 10-6 With Barrier Lowering and Tunneling 106x 10-9 With Barrier Lowering 103x No Barrier Lowering 10-12 0 1000 2000 Reverse Bias (Volts) Fig. 9 Leakage Current Density for a 3kV 4H-SiC Schottky Rectifier. 3000 Schottky Rectifiers 27 In order to explain the more rapid increase in leakage current observed in silicon carbide Schottky rectifiers, it is necessary to include the field emission (or tunneling) component of the leakage current11.

This cell pitch is sufficient to obtain substantial reduction of the electric field at the metal-semiconductor contact as shown later in the chapter. 5 Schottky Rectifier 0 1 10 Forward Current Density 100 1000 (A/cm 2) Fig. 10 Forward Characteristics of 3kV 4H-SiC JBS Rectifiers. Simulation Example In order to validate the above model for the on-state characteristics of the silicon carbide JBS rectifier, the results of two-dimensional numerical simulations on a 3000 V structure are described here.

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