Advances in Photovoltaics: Part 2 - download pdf or read online
By Gerhard P. Willeke, Eicke R. Weber
Semiconductors and Semimetals has amazing itself in the course of the cautious collection of famous authors, editors, and participants. initially well known because the ''Willardson and Beer'' sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely suitable volumes meant for long term influence and reflecting the actually interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in academia, medical laboratories and smooth undefined. This quantity is the second of a suite of seven regarding photovoltaics.
Written and edited by means of the world over well known experts
Relevant to a large readership: physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and smooth
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Extra info for Advances in Photovoltaics: Part 2
Here several I–V characteristics are plotted as current densities. If the current would flow homogeneously, these characteristics should be independent of the cell area. In reality, the small cell (B) shows a much higher mean current density than the large cell (A). This clearly points to a significant contribution of the edge region to the current. 9. 5 mm2-sized solar cell piece, and one medium-sized piece with (c) one and (d) without grain boundaries, and (e) an industrially fabricated p–n junction (base-collector junction of an npn transistor), after Breitenstein and Heydenreich (1994).
These results have been explained qualitatively already in Breitenstein et al. (2006a,b), based on the coupled defect level recombination model of Schenk (1995). For a high local density of recombination states, recombination via multiple energy levels has to be considered, from which recombination across two levels is the simplest case. In Fig. 9, different recombination models are summarized for the depletion region recombination, (A) is the traditional SRH point defect recombination model. 9 Different models for depletion region recombination: (A) SRH model, (B) Schenk model, (C) multilevel model, (D) deep DAP model.
The classical diode theory (Sze and Ng, 2007) does not explain any ohmic conductivity. , 2004). Another very common type of ohmic shunts is caused by Al particles or residues of Al paste at the surface of the emitter. At the final contact firing step, this Al alloys in, leading to a pþ-doped region around the particle by overcompensating the emitter. , 2004). These technology-originated shunts are well known and will not further be considered here. , 2005). These filaments develop preferentially in the upper part of the Si block due to oversaturation of carbon in the melt, and they preferentially grow within grain boundaries in growth direction.