Microelectronics

Get American microelectronics data annual. 1964-65 PDF

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By G. W. A. Dummer, J. Mackenzie Robertson

American Microelectronics facts Annual 1964-65 presents entire details on assorted microelectronics to be had within the U.S.

summary: American Microelectronics information Annual 1964-65 offers finished details on varied microelectronics on hand within the U.S

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5 IE = O·' V = 10 V CB 1. 0 V B C 1csoC125°C) Collector Cutoff Current 1c10 Collector-to-Isolation Leakage Current 1E: = O; Vc1 = 10 V 25 Ic10(125°C) Collector-to-Isolation Leakage Current 1E: = O; 15 1Eso Emitter Cutoff Current Ic - O·, V 0V E B = 3. 10 V CI "' 10 V nA 10 nA 100 nA Notes: 1. These ratings ar e limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. tings refer to a high current point where the collector-to-emitter voltage is lowest.

5 mA 0. 73 0. 85 1c = 5. 0 mA; 1B = 0. 5 mA v 0. 25 o. 4o v CONDmONS le "' 5. o mA; V CE = 5. 0 V 1c MIN 40 = = Collector Saturation Voltage High Frequency Current Gain f= 100 me (Note 3) le = 5. o mA; Vc E = 5. 0 V 34 3. 0 UNITS BENDIX MONOLITHIC MICROCIRCUITS Electrical Characterlst1cs (Cont'd) : SYMBOL CONDITIONS CHARACTERISTIC TYP 1E: = O; MAX 5. 5 pf 1E = O; Vc 1 = 5. 0 V s. o 15 20 pf MIN UNITS cob Output CBpacitance C CI Isolation CBpacitance BV CIO Collector-to-Isolatlon Breakdown Voltage 1c = 0.

1 ±0 . 25 square ) 25 to 500 100 to 10 , 000 Mate rial Capac itance* mi c rofarad� ( /square inch) Al-SiO -Al O . Ol4 to (O Di s sipation Factor ( 0 /o) Tolerance ( 0 /o) + 1 o . 44 * The uppe r limit refers to a 5 -laye r parallel stacked unit . Manufacturer. The Bunker -Ramo Corporation, 843 3 Fallbrook Avenue , C anoga Park, ' C alifornia . 39 BURROUGHS THIN FILM MEMORY PLANES * CONTENTS INTRODUCTION B EHAVIOR O F T H I N FILM M E MORY U NITS THIN F I LM OPERATING C HARACTERISTICS PRODUCT I N FORMATION THE THIN FILM M E M O RY PLANE, TYPE BIP-1 000 Mechanical Characteristics Magnetic And Electrical Characteristics Accessories THE THIN FILM M E MORY PLANE, TYPE SIP-1 001 Mechani cal C haracteristics Magnetic And Electrical Characteristics APPLICATIONS I N FORMATION NOISE MAG N ETIC S H I ELDIN G TH E TRANSFORMER-DIODE MATRIX CURRENT DRIVERS Word Driver For BIP-1 001 Driver And Switch For BIP-1000 T H E I N FORMATION DRIVER The Positive C u rrent Driver The Negative C u rrent Driver THE S EN S E AMPLIFIER * Reproduced by courtesy of the Burroughs Corporation.

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